The Development and Performance of InGaP/GaAs Single-Quantum-Well Heterojunction Phototransistors

This study investigates the current gain (β) and photocurrent with the different base region sizes of InGaP / GaAs Single-Quantum-Well heterojunction phototransistors (SQW-HPTs) at 298K. At ambient temperature, the SQW-HPT’s current gain (β) is 4, which is beneficial for application in optoelectronic integrated circuits. Finally, we made the first SQW-HPT in the world.