Quantitative Analysis on Temperature-dependent Raman Scattering of InP-OI Films and InP Nanostructures

The temperature dependence of Raman scattering in nanostructures can be strongly influenced by various effects including strain and photoexcited carriers. We studied the Raman scattering of InP-OI films over a temperature range of 300 K to 840 K. In view of applying Raman spectroscopy for thermometry of self-heating devices, we compared different temperature-dependent features of Raman spectra: While the temperature dependence of the Stokes peak shift and Stokes/anti-Stokes ratio can be used in InP bulk and thin films, the Stokes peak linewidth results in the best fit and is the most appropriate method for thermal calibration on InP nanostructures. Using these results, we quantified the temperature increase in InP nanoresonators.