Modeling and Numerical Analysis of Heterostructure Single-Walled Carbon Nanotube (SWCNT) Solar Cell

PN type semiconductor mediated heterostructure solar cell has received tremendous attention due to its back-to-back satisfying outcome for environmental issues and world energy. Using the SCAPS-ID simulator, numerical simulations are performed in this study to investigate the effect of acceptor concentration (NA) and thickness ($\lambda$) in the absorber layer (SWCNT) as well as the temperature and defects for each layer of solar cell of our proposed model (ITO/TiO
2
/SWCNT/SnS). In the SWCNT-based heterostructure solar cell, the design parameters are optimized to get better performance. The aim of this research is to peruse the influence of the absorber layer for achieving higher efficiency ($\eta$%) along with reasonable open circuit voltage (Voc), short circuit current (Jsc) and fill factor (FF). By using ITO and TiO
2
as n-type, SWCNT (used as absorber as well) and SnS as p-type along with the front and back contact, a simulated efficiency of 30.84% has been achieved by optimizing the design parameters, which are $\mathrm{N}_{\mathrm{A}}=4\times 10^{21}\mathrm{cm}^{-3}, \lambda=1500\mathrm{nm}$, temperature =300K and the total defects density set at $1\times 10^{14}\mathrm{cm}^{-3}$. In comparison with other similar numerical study, the proposed SWCNT based heterostructure solar cell model shows higher efficiency (30.S4%). So SWCNT shows a fascinating outcome as an absorber in heterostructure solar cell design.