A Comparative Study on the Analytical Performance of AlAs and Silicon DGJLMOSFET in Terms of Gate Oxide Material and its Thickness

In this paper, a comparative study and analysis has been done between AlAs and Silicon-based double gate junction-less MOSFET (DGJLMOSFET) considering the gate oxide and its thickness. This paper also showed the comparison between these two devices in terms of the short channel effects (SCEs), I-V characteristics and electric field profiles. Here, trade-off between AlAs and Si-based DGJLMOSFETs is done where three different types of gate oxide materials are varied and among this materials TiO
2
showed the best performance with both AlAs and Si. Also, the analysis of DGJLMOSFET has been done by varying the thickness of the oxide material. At 1 nm oxide thickness, AlAs and Si both showed the better results. The comparative study between AlAs and Si have been done in this paper analyzing the electric field profiles, I-V characteristics, Gate-to-Source Capacitance ($\mathrm{C}_{\mathrm{GS}}$), Gate-to-Source Transconductance ($\mathrm{G}_{\mathrm{GS}}$) and SCEs. Here, SILVACO ATLAS TCAD simulation tool was used for all simulations. For AlAs DGJLMOSFET, rise of dielectric constant of gate oxide and the decrease of gate oxide thickness actually improved SCEs with subthreshold swing (SS) and drain induced barrier lowering (DIBL) of 67.2 mV/dec and 43.6 mV V-l, respectively and for Si DGJLMOSFET, it is 67.3 mV/dec and 48.2mV V-1, respectively. High $\mathrm{I}_{\mathrm{ON}}/\mathrm{I}_{\mathrm{OFF}}$ ratios are seen for both AlAs and Si but there are slight variations in the values which are discussed in this paper. For AlAs, $\mathrm{I}_{\mathrm{ON}}/\mathrm{I}_{\mathrm{OFF}}$ ratio is $2.87\times 10^{11}$ where Si shows slightly greater value of $2.01\times 10^{12}$. The proposed comparative study can be helpful for the manufacturer to select the desired material for the fabrication of a DGJLMOSFET device in future.