Sentaurus TCAD Model for Thin Layer Sample Used in Van Der Pauw Hall Mobility Measurements

In this paper, we present the simulation of the van der Pauw Hall mobility measurement procedure. We focus on n-type Si and ZnO thin layers on insulating SiO
2
and p-type Si substrates. The results show that the substrate presence may significantly modify the carrier distribution in the thin active layer leading to modification of results obtained from the van der Pauw method