Improvement of Optoelectronic Characteristics of Deep-ultraviolet Laser Diode with an Optimal Thickness of Electron Blocking Layer and Waveguide Layer

Low electron leakage and high optical confinement are challenges in the AlGaN-based deep-ultraviolet (DUV) laser diode (LD). In this paper, optimal thickness of electron blocking layer (EBL) and waveguide layer (WG) is used to increase performance of the laser diode, such as the optical confinement factor (OCF) and emission power of the DUV LD, and reduce the electron leakage. By comparing the performance of laser diodes with different thicknesses of electron blocking layer and waveguide layer. It is found that the DUV LD has best performance of electron blocking ability, when the waveguide layer is set to 90nm and electron blocking layer is set to 50nm. Moreover, the laser diode has a peak emission power of 109.69mW, a slope efficiency of 2.04W/A.