A 40-60 GHz driver amplifier implemented in 0.1 µm Gallium Arsenide process

The design of a broadband driver amplifier between 40-60 GHz is presented in this paper. The amplifier is implemented in 0.1 µm gallium arsenide process from Win Semiconductors. The amplifier achieves a measured gain of 15.5 dB at a nominal bias. The measured gain flatness is within 1 dB between 40-60 GHz. The simulated output power is greater than 16 dBm across most of the band. This driver amplifier is suitable to drive the local oscillator signal of a W-band sub-harmonic mixer.