4H-SiC Semi-Circle Gate Power MOSFET with Low ON-Resistance and High Breakdown Voltage

In this paper we propose a 4H-SiC semi-circular gate vertical MOSFET to lessen both the device ON-resistance and breakdown voltage. By varying the semicircle gate depth we obtain the optimized structure which exhibits an enhancement in the breakdown voltage owed to reduced electric field in the device while the ON-resistance lowers significantly because of absence of JFET region. Comparing with the
$\mathrm{p}+$
shielding trench MOSFET configuration, the simulation consequences demonstration that the ON state resistance, breakdown voltage and figures of merit
$\boldsymbol{(\text{FOM}=\mathrm{V}_{\text{BR}}{}^{2}/\mathrm{R}_{\text{oN}})}$
of our optimized device are enriched by 21.4%, 5%,and 40.14
^%
respectively.