Two Stop-and-Go Gate Driving to Reduce Switching Loss and Switching Noise in Automotive IGBT Modules

A new active gate driving method of “two stop-and-go gate driving (2S&G)” is proposed to reduce both the switching loss (
$E$
LOSS
) and the collector current overshoot (
$I$
OVERSHOOT
) in the turn-on of automotive IGBT modules. 2S&G includes two gate current zeros during turn-on and has only two parameters for a digital gate driver, which means low test cost for parameter optimization. Five different gate driving methods, including the conventional single-step gate driving (CSG), the conventional one stop-and-go gate driving, and digital gate drivings with 100 ns × 4 slots and 20 ns × 20 slots, are compared in the double pulse test using a 6-bit digital gate driver IC at 300 V and 150 A, and the proposed 2S&G showed the best performance. Compared with CSG, the proposed 2S&G reduces
$E$
LOSS
by 42 % under
$I_{\text{OVERSHOOT}}$
-aligned condition and reduces I
OVERSHOOT
by 18 % under
$E_{\text{LOSS}}$
-aligned condition.