Analytical Approach Towards Low Power Device (Differential Amplifier) Using DG MOSFET

A Double-Gate (DG) MOSFET-based differential amplifier has been designed in this research work. This DG MOSFET has the capacity to reduce Short-Channel Effect (SCE) in low-power devices. In this differential amplifier, the differential input-differential output mode of operation has been analyzed for following parameters: (i) differential gain, (ii) common-mode gain, (iii) common mode rejection ratio, and (iv) frequency response. The results achieved are 22.64 dB, -224.22 dB, 246.86 dB, and 65 MHz, respectively. Based on these results, the designed differential amplifier is justified for the use in operational amplifiers as input stage, RF, and other low-power electrical/electronic devices.