A Novel Piezoresistive Pressure Sensor Based on Cr-doped V2O3 Thin Film

This paper reports the fabrication and characterization of a piezoresistive pressure sensor based on Cr-doped V
2
O
3
thin film (Cr-V
2
O
3
TF). It is the first time that the piezoresistive effect of single crystalline Cr-V
2
O
3
TF is demonstrated experimentally and implemented as a pressure sensor. The Cr-V
2
O
3
TF piezoresistors on the membrane experience a stress change caused by a pressure input. This leads to a gradual phase transition of the material from an insulating phase to a metallic phase and results in a resistivity change. This new piezoresistive mechanism opens up the potential for developing highly sensitive piezoresistive sensors based on phase transition.