A 180-220-GHz, 12.7-dBm peak Psat and 17.3% peak PAE Power Amplifier in 250-nm InP HBT

We present a single-stage G-band power amplifier (PA) with high power density and high efficiency in a 250-nm Indium Phosphide (InP) technology. A pseudo-differential common-base (CB) stage with neutralization capacitors and low-loss coupled-line balun (CLB) are designed to deliver 8.3-12.7-dBm output power and 7.7-17.3% power-added efficiency (PAE) over 180-220 GHz. The use of compact baluns allows the design to occupy only 0.011mm
²
with power density of 1.69 W/mm
²
. The design achieves the highest published PAE and power density above 200 GHz for solid-state PAs.