Sub-100nm GaN/Si MMIC processes for 6G telecommunications

In this paper we present the Gallium Nitride on Silicon (GaN/Si) option as compared with the more common Gallium Nitride on Silicon Carbide (GaN/SiC). Electrical and thermal considerations are presented, together with several examples of microwave and millimeter wave MMICs fabricated with the OMMIC GaN/Si process, more than challenging GaN/SiC counterparts while running at similar channel temperature. Running developments such as 40 nm gate length for over 300 GHz Fmax and Enhancement Depletion (E/D) capabilities allowing easier control of multifunction chips will conclude the paper.