Efficient Power Reduction of Volatile Memory Circuits Using Gated Ground and Supply Gated Techniques

In digital era, semiconductor memory circuits play a vital role in data storage and retrieval process. Memory circuits are categorized as RAM and ROM based on the type of data storage. RAM has the advantage of delivering data at faster rate when compared with ROM also it has the capacity of storing large data. RAM has high capacity with large size, whereas ROM has less storage capacity with smaller in size. Due to these advantages RAM circuits are widely used in digital design. Consequently, one of the most appealing research areas is the development of high-speed RAM memory cells. In this paper, design of volatile memory circuits namely SRAM and SESRAM are presented and designed using gated ground and supply gated logic and its parameters are compared with the proposed SESRAM using gated ground and supply gated logic. The comparison shows there is significant improvement in the proposed logic in terms of power and area.