GaN-based Class-F Power Amplifier for 5G Applications

In this paper, the class F power amplifier is proposed and developed for 5G applications. The design methods include simulation followed by layout design and fabrication. Then, 1 tone Harmonic balance analysis of the fabricated structure of PA is performed to obtain the simulation and measurement results of PAE 79.251% and 12.194%, Gain of 16.54 dB and 13.03 dB, ACP of − 28.09 dBc and − 22.039 dBc, and 3
^rd
and 5
^th
order harmonics distortion of −20.5 dBc and −48.9 dBc and −18.4 dBc and −45.2 dBc respectively. Also, the study of MAE (in %) performance for Pout, gain, PAE, ACP, 3
^rd
and 5
^th
harmonic distortion having values 0.0064, 0.0023, 0.0072, 0.00605, 0.0021, and 0.0037 respectively is analyzed and verified.