A Wideband Noise Cancelling Mixer in 130-nm BiCMOS Process

This paper presents a low noise, high conversion gain mixer that is realized using the SiGe 130nm BiCMOS process. The propose mixer has adopted a noise-canceling technique for reducing noise by injecting a current at the common emitter of the RF transistors. The proposed mixer achieved a power consumption of 6.84 mW with an improvement in noise performance by 1dB. It achieved a 3 dB bandwidth of 10 GHz and a flat band noise figure variation of 0.2 dB over the 3dB bandwidth. The mixer has an OIP3 of 12.4dBm, a noise figure of 6.1dB, and a conversion gain of 23.1dB