Mathematical Modeling of Annealed Trilayer Oxide-Based Memristor Device

This paper focuses on the mathematical modeling of tri-layer HfO2/TiO2/HfO2-based RRAM devices. Memristor, which is also known as RRAM device is the new generation non-volatile memory device. It is a passive element that establishes the relation between charge and flux. The literature survey portrays that the fractional order memristor models are not compatible with SPICE coding and first order RRAM models have limitations in elucidating the RRAM device’s oscillation behavior. A mathematical approach using is adopted to validate the empirically extracted results. The main advantages are window functions with fewer fitting parameters are used for the Biolek window function combined with the VTEAM model to overcome the boundary problems.