A high efficient Double diode equivalent circuit based model for triple-junction solar cells

in the carried work, we are focused on the multi-junction solar electric characteristic study. The concerned triple-junction photovoltaic cell is investigated by using a high efficient triple-junction photovoltaic cell GaInP/GaAs/Ge. In the aim of accomplishing this step, a detailed dynamic model is investigated. It is based on the double diode electric equivalent circuit. The developed equivalent circuit model integrates the fundamental parameters of each sub-cell on the one hand. On the other hand, it involves the impact of temperature and solar radiation deviations on the energy gap, on the sub-cells parameters and on the double diode dark intensities currents for both used diodes.To highlight the performance of the developed model, a simulation work is carried out. In fact, the imagined triple-junction photovoltaic cell is implemented by using the subsystem concept in Matlab/Simulink environment. Most significant results are given and discussed.