GLAD synthesized WO3 Nanowire arrays using RF Sputtering

This article represents metal-semiconductor-metal (MSM) Ultraviolet (UV-A) photodetector (PD) fabricated using GLAD (glancing angle deposition) integrated with radio frequency (RF) sputtering technique. Surface morphological analysis using FE-SEM (field emission scanning electron microscope) established the successful deposition of WO3 NWs. Moreover, from the optical analysis, absorption and photoluminescence (PL) spectroscopy different defects level were studied in the WO3 structure. Besides, symmetrical logarithmic current-voltage characteristics depict the formation of ohmic contact in between that of the device material and metal (Ag) electrode. Transient analysis showed fast PD response of 18 ms rise time and 10.6 ms decay time which is attributed to enhance charge generation and collection efficiency through the interdigitated electrode.