RF/Analog Performance Enhancement of TMG SD FinFET

This work presents the impact of variation in gate length (L
g
) through TCAD simulation software to analyze the transfer characteristics and RF/analog performances of the triple material gate (TMG) step drain (SD) FinFET device. Drain current and various figure of merit (FOM) like transconductance, transconductance generation factor (TGF), early voltage (V
EA
), intrinsic gain (A
v
), gate capacitance (C
gg
), transconductance frequency product (TFP), cut-off frequency (F
t
), gain frequency product (GFP), and gain transconductance frequency product (GTFP) are systematically presented for evaluating the performance. It is observed that TMG SD FinFET is more convenient than conventional FinFET in terms of RF/analog performance. From the numerical analysis of simulated results, we could understand that TMG SD FinFET has 76.86% and 99.80% improvement in drain current and transconductance (Gm
max
) as compared to conventional FinFET. For RF/analog circuits, most preferable peak values of TGF, GTFP and A
v
for gate length of 30 nm are 45.16 V
^-1
, 8.419×10
¹⁵
Hz and 464.83 dB, and TFP, GFP and F
t
for gate length 20 nm are 2.605 Hz, 2.338×10
¹⁴
Hz, and 8.419×10
¹⁵
Hz, respectively.