Computational Study of Double Absorber layer Perovskite Solar Cell Devices

In this paper, we proposed two device structures by substituting a double absorber (Absorber-1 narrow band gap and Absorber-2 wide band gap) namely, P-I/P-II (lower/Higher band gap absorber (MAPbI3) with ETL interface), and compared with a single absorber. The substitution of double absorber increased the open circuit voltage (V
OC
) and efficiency of the photo-generated carriers is absorbed due to wider and narrow band gap absorber respectively. The impact of the absorber carrier concentration on the performance parameters of the device have been worked out. Acceptor concentration played a vital role than the donor concentration to achieve maximum efficiency. Strong acceptor concentration gave the optimized results of short circuit current of 16.02 mA/cm
²
, Voc of 1.72 V, fill factor of 89.69% and power conversion efficiency of 24.79%. Further we analyzed the effect of thickness, defect density and temperature of P-I structure on the performance of the PSC.