Microwave Detection Characteristics of Gated Asymmetrical Selectively Doped Semiconductor Structures at the Power and Frequency Variation

The experimental study of the detection properties of new planar microwave diodes based on gated asymmetrical selectively doped semiconductor GaAs/AIGaAs structures on a polyimide film and a crystal substrate in the millimeter wavelength range (51 GHz–144 GHz) at temperatures in the range from nitrogen (77 K) to room temperature (300 K) is carried out. Dependences of the voltage sensitivity of microwave diodes on the level of incident power and on frequency of electromagnetic radiation are obtained. The value of voltage sensitivity from 6 V/W to 10 V/W is determined. It is shown that the investigated diode structures retain their characteristics within the specified frequency range without significant deterioration at higher frequencies of the range. At nitrogen temperatures voltage sensitivity increases several times compared to room temperatures. Results of the research indicate the promising applications of these diode structures for sensors in the gigahertz and terahertz frequency bands.