Performance Assessment of a Dielectrically Modulated SiGe-Pocket DG TFET-based Biosensor

In this paper, a gate-drain underlap and stack oxide double gate Tunnel Field Effect Transistor (DG TFET) with an n-type SiGe pocket at the source-channel interface device-based biosensor is proposed. The variation in the dielectric constant corresponding to the change in the type of biomolecule is reflected in the changes observed in the device’s transfer characteristics. The label-free sensing of biomolecules is performed by the device and a high sensitivity is obtained. The gate-drain underlap region consists of a spacer oxide which in turn reduces the ambipolarity of the device. Extensive sensitivity analysis of the biosensor device is done in terms of the threshold voltage, sub-threshold swing and drain current for different biomolecules.