Effect of Nitride Stress on Linearity performance of AlGaN/GaN HEMT

Strain engineering has proved to be useful for enhancing the performance of AlGaN/GaN HEMT devices. The device transfer characteristics are significantly affected by proper optimization of the stress in the nitride passivation layer. Nonlinearity effects are the major concern for AlGaN/GaN HEMT devices at high frequencies which can vary due to the intrinsic stress in the nitride passivation layer. In this paper for the first time, we have reported the effect of stress on the linearity of the device. With L
G
=200nm the linearity parameter like g
m1
, g
m2
, g
m3
, VIP
2
, VIP
3
and IIP
3
are compared for no stress, comparative stress and tensile stress device.