Multisubband Electron Mobility in Parabolic Coupled Double Quantum Well Structure

We compute numerically electron mobility µ as a function of applied electric field F for different doping concentrations N
d
in Al
0.3
Ga
0.7
As parabolic coupled double quantum well (PCDQW) structure. Here, we consider the effect of ionized impurity (ii-) and alloy disorder (al-) scattering and analyze their respective mobilities µ
ⁱⁱ
and µ
^al
. We show that as |F| increases from 0 kV/cm, µ enhances and becomes maximum, again decreasing till the end of double subband occupancy. As N
d
increases µ
ⁱⁱ
enhances but µ
^al
decreases at a higher rate as compared to µ
ⁱⁱ
resulting reduction in µ during single subband occupancy for the higher value of doping concentrations.