Influence of total ionizing dose on LWM Bulk and SOI p-FinFET

The total ionizing dose effects of bulk and SOI p-FinFET with linear workfunction modulated (LWM) is presented and investigated. The gate metal workfunction is horizontally varied to achieve better electrostatic integrity of devices. In the pre-radiation condition LWM improves the OFF-state current by 1-decade for both the devices. With the irradiation trap charges are found at Si/SiO2 interfaces, these trap charges shift the threshold voltage towards negative. At higher radiation dose of 2000 krad, SOI LWM device shows 39% lesser shift in threshold voltage as compared to LWM bulk device. This implies that LWM makes the SOI device more radiation tolerable as compared to bulk p-FinFET.