Simulation of GaN-Based Polarization Junction Super HFET for Power Electronics Application

Currently, polarization junctions (PJs) are the most promising candidates for power devices. PJs with wide band gap semiconductors like GaN can further enhance the performance in terms of improved breakdown voltage and less susceptible to leakage. In this work, a double-hetero GaN/AlGaN/GaN PJ is proposed to realize 2-D hole gas (2DHG) and 2-D electron gas (2DEG) at the upper and lower junction of the device. The DC, CV, and breakdown characteristics have been investigated. Moreover, the effects of bulk and interface traps on substrate leakage current and threshold voltage and breakdown voltage (BV) are also investigated. Impact ionization is observed at the drain-side boundary of the p-GaN region, and the BV is dominated by hole leakage current at the base electrode.