Experimentally Study on the Effect of RIE Etching Power on Etching Rate of $\beta-\text{Ga}_{2}\mathrm{O}_{3}$ Thin Film

As a member of ultra-wide band gap semiconductor materials,
$\beta-\text{Ga}_{2}\mathrm{O}_{3}$
materials have attracted wide attention from researchers in the semiconductor field in recent years. Etching process is crucial to realize semiconductor devices and integrated circuits based on
$\beta-\text{Ga}_{2}\mathrm{O}_{3}$
materials. Based on the reaction ion etching process commonly used in silicon-based semiconductor technology, the etching experiment research of
$\beta-\text{Ga}_{2}\mathrm{O}_{3}$
thin film is carried out. The
$\beta-\text{Ga}_{2}\mathrm{O}_{3}\text{film}$
is etched with SF6, based on the induction coupled reaction ion etching. The effect of RIE etching power, excitation power and bias power, on etching rate of
$\beta-\text{Ga}_{2}\mathrm{O}_{3}$
thin film has been studied. SEM characterization results show that the etching rate is the highest at 600W excitation power. The etching rate increases with the increase of bias power. The etching rate at 200W bias power is slightly higher than that at 150W bias power. However, the photoresist used as the etch mask will be damaged at 200W bias power.