Emerging Two Dimensional Channel Materials for MOSFETs: A Review

The aggressive scaling down of the Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) need ultra thin channels, traditional semiconductors i.e., Si, Ge etc., cannot be made very thin without negligible surface roughness and dangling free bonds, in this context 2D materials are emerged as promising alternative materials to replace traditional semiconductors due their atomically thin thickness, high carrier mobilities and mechanical flexibility. The family of 2D materials consists of a wide variety of different compositions, and they contain almost all of the elements found in the periodic table. As a consequence of this Metals, semimetals, insulators, and semiconductors will emerge that have direct and indirect band gaps that span the entire visible spectrum from ultraviolet to infrared. For these reasons 2D materials are used in electronics, optoelectronics, novel device structures and flexible electronics. In this review paper we explained various classifications of 2D materials and their properties. We also explored the various applications of 2D materials for novel electronic devices. Also we explained FinFET, Tunnel FET (TFET) and Gate All Around (GAA) FET using 2D materials. Finally we concluded the paper with challenges in fabrication of the device.