Design and Simulation of a Low-Noise Amplifier for Radar Application at 5 GHz Frequency Band

This paper presents the design and simulation of the low noise amplifier at the 5GHz frequency band. These low noise amplifiers use the Agilent's ATF-34143 transistor, which is the low noise, high dynamic range, pseudomorphic high electron mobility (pHEMT) transistor. The designed low noise amplifier has a gain of 10.84dB, noise figure of 0.6dB, the input reflection coefficient of -14dB and the output reflection coefficient of -10.7dB at the frequency of 5GHz. The low noise amplifier is simulated in the Applied Wave Research tool (AWR).