Comparing the V-I Characteristics of CeO2 based Omega FinFET over Conventional SiO2 Material by Varying the Oxide Thickness

The aim of the project is to compare the VI characteristics of Cerium Oxide (CeO2) based omega FinFET over conventional Silicon Dioxide (SiO2) material by varying the oxide thickness and its range to be 1 nm to 21 nm. DFT tool is used to perform the VI characteristics. The method was performed for the 21 samples per group were Cerium Oxide (n = 21) and
$\text{SiO}2(\mathrm{n}=21)$
. For the two samples, the sample size is the same for the control group and experimental group. By varying the Gate and Drain voltage in Omega FinFET with the different materials of CeO2 and SiO2. Samples were calculated by using previous study results, in Clincalc analysis by keeping threshold energy 0.05%, G power is 0.8 and confidence interval is 95%. Maximum accepted error is fixed is 0.05 and beta is 0.2. From the analysis, CeO2 shows better performance with the variations in band gap and dielectric constant with values of 3.6 eV and 26 than the SiO2 band gap and dielectric constants with the values of 3.9 eV and 8.4 and the significance value is
$\mathrm{p}\unicode{x00A1}0.05$
. The conventional CeO2 omega FinFET is significantly higher compared to SiO2 based omega FinFET.