Simulation and Comparison of Current-Voltage characteristics of MESFET by Varying Channel Length and Comparing it with Single Gate MOSFET to Optimize Conductivity

The current and voltage characteristics of MESFET and single gate MOSFET are simulated by varying channel length ranging from 0 to 1 micrometer. Electrical conductance of MESFET (n = 320) and MOSFET (n = 320) were evaluated in the NANOHUB tool simulation environment. MESFET has significantly higher conductance (2313.837*10-6 mho) for channel length (0.25*10-6m) (p = 0.000) than MOSFET (69.910456*10-6 mho) for channel length (0.25*10-6 m). Within the limits of this study, MESFET is observed to offer better conductivity than MOSFET.