Simulation and comparison of voltage and current characteristics of FinFET by varying its oxide thickness with dual gate MOSFET for improved conductivity

By altering their oxide thickness, which ranges from 2 nm to 20 nm, FinFET and dual gate MOSFET current and voltage characteristics are simulated. In the NANO HUB tool simulation environment, the electrical conductance of MOSFET (n=320) and FINFET (n=320) was compared using different oxide thicknesses ranging from 2 nm to 20 nm. Compared to single gate MOSFETs (1.64*10-4 mho), FINFETs have significantly better conductance (2.66*10-4 mho, P0.05). For both FINFETs and MOSFETs, a thickness of 2 nm was ideal for achieving the highest conductivity. The best conductivity is provided by FINFETs with oxide layers of 2 nm under the parameters of this investigation.