Design of S-Band Vector Modulator with Medium-and-High Power Capacity Based on PIN Diodes

In this paper, an S-band vector modulator with medium-and-high power capacity is proposed. Silicon PIN diodes with high I-region width is applied to improve the power capacity effectively. The vector modulator is proposed with balanced structure to reduce the influence of parasitic parameters of PIN diodes. The proposed vector modulator is simulated in ADS software to achieve its amplitude and phase performance. On this basis, physical processing and test have been carried out. The balanced vector modulator can achieve amplitude modulation of - 10.5 dB ~ -50 dB and phase modulation of 0~360 degrees which are in good agreement with the simulation results. When the attenuation is greater than -15.6 dB, the linear range of input power reaches 24 dBm.