A Scalable Nonlinear Model for GaN HEMTs with Self-Heating Effect

A nonlinear scalable model for Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) including the self-heating effect is described in this paper. A modified Angelov model is used as the reference. Nonlinear scaling rules for
$I_{ds},R_{th}$
and other model parameters are presented. The accuracy of the reference model and the effectiveness of the scaling rule is verified by 0.25
$\mu\mathrm{m} \text{GaN}$
HEMTs.