A 24-28GHz Compact High-power Amplifier for 5G Millimeter-Wave Front-end

This paper presents a compact high-power amplifier (HPA) operating in K/Ka band (24-28GHz), using OMMIC 100nm Gallium Nitride on Silicon (GaN-on-Si) process. In 24-28GHz, the designed HP A demonstrated a small-signal gain of over 22dB, a saturated output power of 37-38.7dBm and associated Power Added Efficiency (PAE) of 29-31.8%, showing great potential for 5G millimeter-wave applications (i.e. for band n258). The die area of the HPA MMIC is only 7.5mm
²
.