Systematic multiple filament statistical methodology using a successive varying-voltage technique for series resistance effect in post-breakdown (forming) characterization

A successive varying-voltage stress methodology is developed to investigate multiple BD (or filaments) statistics for realistic applications where series resistance can play an important role in post-BD regime. In these situations, classical successive BD theory is not applicable in the characterization of post BD current-transients. We found an appreciable occurrence of successive BD events at a lower percentile even with voltage drop which generally delays the occurrence of successive BD. This methodology is generic for any dielectrics or thickness range and most relevant for on-chip decoupling capacitor applications and for a deeper understanding forming process in ReRAMs.