RF Characterization and Analysis of Coplanar Waveguide on Various Silicon Wafers for 2.5D Integration

This paper characterizes and analyzes coplanar waveguides (CPWs) on various silicon wafers, which are widely used as the horizontal interconnection in the 2.5D integration of RF system. The characterizations are conducted on not only various dimensions of the CPW but also different dielectric materials and fabrication processes. In addition, some full-wave simulations are carried out for the analysis, where the dielectric loss of SiO
2
and the parasitic surface conduction of the SiO
2
/Si interface are studied. These results are very valuable for the future RF integration design.