Design of a P-JFET Compatible with CMOS Technology

Starting from the process conditions of P-channel JFET, this paper analyzes the influence of main process parameters on key parameters such as device pinch-off voltage, breakdown voltage, and on-resistance. Based on the working requirements of the blocking surge protector, it is necessary to design a P-type conductive channel JFET device with a pinch-off voltage of 9.5V and a breakdown voltage of 20V. The structure and electrical performance of the device are simulated by TCAD simulation software, and the influence of each parameter is verified by actual tape-out. The actual tape-out data show that when the injection dose of PW is 2E12cm-2, the epitaxial thickness is 5um, and the buried layer is a single antimony injection, the P-type conductive channel JFET device can meet the design requirements, which has certain guiding significance for the production of related junction FET devices.