Optical Performance of Intended Source FDSOI based Photodetector

This paper presents photo-electrical performance of proposed intended source FDSOI based photo-detector. In this article a n-p diode is implemented below the buried oxide (BOX) layer of proposed device. The light detection performance is firstly observed under dark condition and then by exposing proposed device by light intensity. After investigation of light detection property, that is further clarified by energy band diagram. The Back-biasing to upper FDSOI MOSFET has been observed within diode by phot-generated charge collection which provide Light induced voltage shift (LIVS) for proposed device by means of capacitive coupling effect which is analyzed by the variation in IdVg response under dark condition and at a various light intensity condition. Evaluation of light induced voltage shift for the proposed device has been analyzed by variation in threshold voltage by exposing device by various light illumination condition. The simulations have been done by TCAD simulation tool and it shows that an implementation of n-p diode with intended source FDSOI based transistor are applicable in designing of efficient photo-detector.