A Comprehensive Review on FinFET, Gate All Around, Tunnel FET: Concept, Performance and Challenges

After using strained silicon devices and high K metal gate devices for decades, design companies have shifted to 3D transistors i.e FinFET since 2011. FinFETs based FPGA products, processors for laptop/desktop and mobile phone, have been manufactured in mass scale. But with continuous shrinking of the device dimensions, performance of FinFET is compromised due to short channel effects (SCE’s). Short channel effects are significantly reduced in Gate All Around (GAA) than as compared to FinFET for the same technology node. This paper reviews different semiconductor devices which have dominated the semiconductor industry and other novel devices which can replace the semiconductor devices adopted by the industry in near future. Semiconductor devices reviewed in this paper are FinFET, Gate All Around (GAA), and Tunnel FET (TFET). Other related FETs like hetrojunction dopingless TFET, and Gallium Nitride FET (GaN-FET) are also reviewed. This paper also discusses different performance parameters of these devices. Some of these parameters are DIBL, sub threshold swing, current drive, $\mathrm{I}_{\mathrm{on}}$/$\mathrm{I}_{\mathrm{off}}$ ratio, transconductance etc. Different applications and challenges involved in the fabrication process is also discussed in detail. This paper will give researchers a good overview of the current technology adopted by industry and its future scope.