1.2-kV SiC Superjunction Dual-channel MOSFET with Ultra Low Specific on-Resistance

In this paper, a novel superjunction dual-channel MOSFETs were proposed, which demonstrated its static and dynamic characteristics compared with dual-channel MOSFET through TCAD simulation. Due to the smaller temperature dependency, the superjunction dual-channel MOSFET had superior static performances, especially at high temperature. The Semi-SJ device showed ultra-low R
on,sp
of 1.09 mΩ•cm
²
at room temperature (RT) and 1.54 mΩ•cm
²
at 175 °C. Furthermore, the hot spot away from source contact contributed to the enhanced short-circuit capability.