Increase Quality of Gaas Monocrystals for Solar Energy Devices Due to Control of Dislocations Using Alhorithm of Detection of Contour Lines of Etching Pits on Surface Waffer Semiconductor

The quality and efficiency of solar energy devices depend on the quality of semiconductor single crystals, the structural perfection of which is determined by the number of dislocation pits, characterized by the density on the surface of the GaAs wafer after selective etching. The processing of digital images of the wafer surface makes it possible to automate the control of the production of semiconductor monocrystals GaAs. The purpose of the article is to develop for the first time an algorithm for detecting etching pit contour line on the image surface of a semiconductor wafer with minimal computational resources.