Design of Dual-Band 28/39GHz Power Amplifier MMIC in 0.15-μm GaN HEMT Technology

A dual-band high efficiency power amplifier (PA) at Ka-band (28/39 GHz) by using 0.15 um GaN on SiC process is proposed. The PA utilizes two-stage two-way combined structure with dual-band matching networks which are composed of a series transmission line and impedance buffer element, to fulfil matching conditions at both fundamental and harmonic termination. The proposed dual-band PA achieves the small signal gain of 26/15 dB, 35 dBm saturation output power, 38%/29 % peak power added efficiency (PAE) at 28 and 39 GHz, respectively. The proposed GaN MMIC PA achieves in a small size (1.6 mm
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1.2 mm) while still remaining the comparable performance in other parameters.