Abstract:
Proton irradiation enables the production of recombination layers in silicon power devices. The defect spectrum after 3 MeV proton irradiation obtained by DLTS measuremen...Show MoreMetadata
Abstract:
Proton irradiation enables the production of recombination layers in silicon power devices. The defect spectrum after 3 MeV proton irradiation obtained by DLTS measurement indicates a favourable concentration ratio between divacancies and A centres, comparable to that after electron irradiation with energies > 10 MeV. Additionally, an n-doped layer formed by shallow donors (hydrogen containing. defects) is observed after ∼ 350°C annealing. Combined application of electron and proton irradiation in power diodes results in very soft recovery behaviour. Proton irradiation improves the turn-off behaviour of GTO-thyristors in comparison to electron irradiated devices.
Published in: 1985 International Electron Devices Meeting
Date of Conference: 01-04 December 1985
Date Added to IEEE Xplore: 09 August 2005