Abstract:
In this paper a new concept for high voltage planar junctions is presented. The necessary widening of the space charge region at the end of the junction is obtained by im...Show MoreMetadata
Abstract:
In this paper a new concept for high voltage planar junctions is presented. The necessary widening of the space charge region at the end of the junction is obtained by implantation through small openings in the oxide mask and subsequent drive-in, leading to a controlled smeared-out dopant distribution. Experimental results show the validity of the concept.
Published in: 1985 International Electron Devices Meeting
Date of Conference: 01-04 December 1985
Date Added to IEEE Xplore: 09 August 2005
