MoSi2-gate MOSFET's for VLSI

Refractory metal silicide gate n-channel MOSFET's have been fabricated by RF sputtering from a hot-pressed MoSi
2
alloy target. The annealed MoSi
2
sheet resistance was 2Ω/□. The MOSFET's were fabricated using plasma etching, projection alignment and a fully ion-implanted process. Typical values for a 1.7 × 1.7 µm
²
linear MOSFET are a threshold voltage of 1- 1.5V and a transconductance of 50-100 µmho. Short channel (length and width) and substrate effects on the threshold voltage are demonstrated.