High current drive uniaxially-strained SGOI pMOSFETs fabricated by lateral strain relaxation technique

Novel uniaxially-strained SiGe-on-insulator (SGOI) pMOSFETs are successfully fabricated by utilizing lateral strain relaxation process and the mobility enhancement of 100% is realized in spite of low Ge content (20%). This high mobility enhancement is maintained in high vertical effective fields as well as in short channel devices. As a result, I/sub on/ enhancement of 80% is demonstrated in 40 nm gate length uniaxially-strained SGOI pMOSFETs.