Highly reliable 50nm-thick PZT capacitor and low voltage FRAM device using Ir/SrRuO/sub 3//MOCVD PZT capacitor technology

For the first time, we successfully developed highly reliable 50nm-thick polycrystalline PZT capacitor using noble Ir/SrRuO/sub 3/ top electrode and MOCVD PZT technology. In the 50nm-thick PZT capacitor, 33/spl mu/C/cm/sup 2/ of remanent polarization and 0.7V of saturation voltage have been demonstrated. Moreover, after 100hrs of bake-time at 150/spl deg/C, opposite-state polarization margin was over 23/spl mu/C/cm/sup 2/, which is world-wide best result so far achieved. Using this capacitor technology, highly reliable low voltage operating embedded FRAM device was successfully developed.