A novel oscillation circuit using a resonant-tunneling diode

A novel oscillation circuit using a resonant-tunneling diode (RTD) is proposed. The circuit has a simple configuration consisting of an RTD, a high-electron-mobility transistor (HEMT), and an inductor. A large oscillation swing that substantially exceeds the RTD negative differential resistance region can be obtained, since the oscillation is based on the RTD switching between the peak and valley states. To analyze the large-signal behavior, circuit simulation has been carried out. It was found that the oscillation frequency increases by increasing the RTD peak current density j/sub p/ or by decreasing the inductance L. A frequency as high as 180 GHz has been predicted when j/sub p/=1/spl times/10/sup 5/ A/cm/sup 2/ and L=0.1 nH.